Effect of annealing temperature on structural and optoelectronic properties of gamma-CuI thin films prepared by the thermal evaporation method

Journal article

Authors / Editors

Muiva, Cosmas

Research Areas

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Publication Details

Author list: Moditswe C, Muiva CM, Luhanga P, Juma A

Publisher: Elsevier

Place: OXFORD

Publication year: 2017

Journal: Ceramics International (0272-8842)

Journal acronym: CERAM INT

Volume number: 43

Issue number: 6

Start page: 5121

End page: 5126

Number of pages: 6

ISSN: 0272-8842

eISSN: 1873-3956

Languages: English-Great Britain (EN-GB)

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Abstract

High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV-Vis spectrophotometry, Scanning electron microscopy and measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200 degrees C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49 nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70-80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0x10(-3) Omega cm.

Keywords

Annealing temperature, CuI thin films, Optoelectronic properties, Structural properties, Thermal evaporation

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