Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

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Publication Details

Author list: Dintle LK, Luhanga PVC, Moditswe C, Muiva CM

Publisher: Elsevier

Place: AMSTERDAM

Publication year: 2018

Journal: Physica E: Low-dimensional Systems and Nanostructures (1386-9477)

Journal acronym: PHYSICA E

Volume number: 99

Start page: 91

End page: 97

Number of pages: 7

ISSN: 1386-9477

eISSN: 1873-1759

Languages: English-Great Britain (EN-GB)

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Abstract

The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (E-g) was evaluated on the basis of the derivative of transmittance (dT/d lambda) versus wavelength (X) model and Tauc's extrapolation method in the region where the absorption coefficient, alpha > 10(4) cm(-1). The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

Keywords

chemical spray pyrolysis, In doped ZnO, Optoelectronic properties, Structural properties

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